08:00
09:00
10:00
11:00
12:00
13:00
14:00
15:00
16:00
17:00
18:00
19:00
›8:30 (2h10)
8:30 - 10:40 (2h10)
Epitaxie de nanostructures et de nouveaux systèmes
Chair: Fabrice Oehler (C2N)
› InGaN -based nanostructures for photoelectrochemical water splitting
- Blandine Alloing, Centre de recherche sur l'hétéroepitaxie et ses applications
08:30-09:00 (30min)
› Toward UV-C emission in core-shell structures based on (Al)GaN-µpillars arrays
- Houssein Mohaidly, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
09:00-09:20 (20min)
› Patterned growth of GaAs on Si using alternative lithography methods
- Charles RENARD, Centre de Nanosciences et de Nanotechnologies
09:20-09:40 (20min)
› Toward the realization of InGaN micro-substrates by HVPE for efficient red emitting micro-LEDs
- Arthur Sauvagnat, Institut Pascal
09:40-10:00 (20min)
› Arrays of Epitaxial GaN Nano-Crystallites Grown by VLS approach at Low-Temperature (500-650°C) on Various Substrates
- Alexandre Jaud, Laboratoire des Multimatériaux et Interfaces (LMI)
10:00-10:20 (20min)
› Experimental study and Kinetic Monte Carlo simulation of InGaN nanodots growth
- HYDRICE NZOMO, Institut Pascal
10:20-10:40 (20min)
›10:40 (30min)
10:40 - 11:10 (30min)
Pause café
›11:10 (1h40)
Développements expérimentaux et caractérisations ex- et in-situ
Chair: Jean-Baptiste Rodriguez (IES)
Chair: Jean-Baptiste Rodriguez (IES)
11:10 - 12:50 (1h40)
Développements expérimentaux et caractérisations ex- et in-situ
Chair: Jean-Baptiste Rodriguez (IES)
› Cavity-enhanced optical flux monitoring for the growth of oxide materials.
- Roman Rousseau, École Centrale de Lyon
11:10-11:40 (30min)
› Probing inversion symmetry breaking and related electronic properties in ultrathin tellurides
- Fabien Cheynis, Centre Interdisciplinaire de Nanoscience de Marseille
11:40-12:10 (30min)
› Molecular beam epitaxy of BaTiO₃ assisted by broadband cavity-enhanced optical flux monitoring.
- Mohamed Oussama BOUNAB, Institut des nanotechnologies de Lyon - Site d'Ecully
12:10-12:30 (20min)
› Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura
- Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI)
12:30-12:50 (20min)
›12:50 (1h10)
12:50 - 14:00 (1h10)
Déjeuner
›14:00 (1h50)
14:00 - 15:50 (1h50)
Couplage épitaxie/propriétés
Chair: Noelle Gogneau (C2N)
› Magnetic and spin-transport properties of MgB2-based and NbN-based epitaxial multilayers.
- Thomas Hauet, Institut Jean Lamour
14:00-14:30 (30min)
› Strain relaxation in ferroelectric/dielectric superlattices and its impact on ferroelectric domains
- Nathalie Lemee, Laboratoire de Physique de la Matière Condensée - UR UPJV 2081
14:30-14:50 (20min)
› Epitaxial growth and process developments for SiC-based CMUTs in harsh environments
- Khaoula Azaiez, Centre de recherche sur l'hétéroepitaxie et ses applications
14:50-15:10 (20min)
› Investigation of InGaN buffer layer inclusion in InGaN/GaN Nanowire Superlattice: A way towards high efficiency red light emission
- Krishnendu Sarkar, Centre de Nanosciences et de Nanotechnologies
15:10-15:30 (20min)
› InGaN templates on porous layers for red LED epitaxy
- benjamin damilano, CRHEA
15:30-15:50 (20min)
›15:50 (30min)
15:50 - 16:20 (30min)
Pause Café
›16:20 (1h30)
16:20 - 17:50 (1h30)
Session Poster
› Study of Ga2O3 thin films homoepitaxially grown on (010), (-201) and (001) substrates.
- Vincent Sallet, Groupe d'Etude de la Matière Condensée
16:20-17:50 (1h30)
› Al0.15Ga0.85N compliant microdisks: an innovative template unlocking AlGaN growth across the entire aluminium composition range
- Lea Lacomblez, Centre de recherche sur l'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Etude des propriétés de transport des parois d'antiphase dans les semiconducteurs III-V/Si par les techniques C-AFM et KPFM.
- Rozenn Bernard, Institut des Fonctions Optiques pour les Technologies de l'informatiON
16:20-17:50 (1h30)
› NH3-MBE growth of ScAlN/GaN HEMTs with cap layers
- Yvon Cordier, Centre de recherche sur l'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Croissance du SiGe et SiGeC par épitaxie RP-CVD entre 550 °C et 500 °C
- Mounir SOUALHI, STMicroelectronics [Crolles]
16:20-17:50 (1h30)
› FROM STRUCTURAL BOUNDARIES TO EMBEDDED CONDUCTION NETWORKS: ANTIPHASE BOUNDARIES AS VARIABLE-RANGE HOPPING PATHWAYS IN GAP/SI (001) HETEROSTRUCTURES
- Wijden Khelifi, Institut de Physique de Rennes
16:20-17:50 (1h30)
› GaN heteroepitaxy on Mesoporous Si compliant substrates
- NGUYEN Tan Hoang Vu, GREYC, Université Caen Normandie, ENSICAEN, CNRS, France, University Côte d'Azur, CNRS, CRHEA, Valbonne, France
16:20-17:50 (1h30)
› Multiscale simulations for epitaxial growth of semiconductor materials
- Vanessa Batibuka Teza, STMicroelectronics [Grenoble]
16:20-17:50 (1h30)
› Global and local mapping of strains by X-ray diffraction within InxGa1-xN templates on porous layers for µLEDs epitaxy
- Daniel Pépin FOWAN, CNRS
16:20-17:50 (1h30)
› Growth of WO3 thin films on W(110)
- Hozane Blanche NGONGANG ELOKO, Centre Interdisciplinaire de Nanoscience de Marseille
16:20-17:50 (1h30)
› Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura
- Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI)
16:20-17:50 (1h30)
› Gas-assisted MBE growth of MoS2 on cystalline substrates
- Minh-Tuan Dau, Centre de recherche sur l\'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Selective area growth of infrared GeSn semiconductors on Si
- Léa Combes, PHotonique, ELectronique et Ingénierie QuantiqueS
16:20-17:50 (1h30)
› III-V Epitaxy on 300mm Si Substrate by MOCVD for Micro and Optoelectronic Applications
- Clara Cornille, Laboratoire des technologies de la microélectronique
16:20-17:50 (1h30)
›18:00 (1h30)
18:00 - 19:30 (1h30)
Réunion du comité scientifique
