Conférence du GDR MATEPI - Sciencesconf.org

8:30 - 10:20 (1h50)

Epitaxie sous faibles intéractions (Van der Waals)

Chair: Xavier Wallart (IEMN)

› Growth of transition metal dichalcogenide materials on sapphire with metal organic chemical vapor deposition - Pierre Morin, IMEC 08:30-09:00 (30min)

› Proximity effect between 2D ferroelectric and ferromagnetic materials - Cyriack Jego, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, F-38000 Grenoble, FRANCE 09:00-09:20 (20min)

› Controlled formation of quasi-free-standing graphene on SiC via post-growth and cooling-phase hydrogenation - AHMED-ABDOU-RABEH EL ALOUANI, Centre de recherche sur l'hétéroepitaxie et ses applications, Laboratoire Charles Coulomb 09:20-09:40 (20min)

› Miscibility gap and CVD growth of monolayer WSeTe - Fabrice Oehler, C2N 09:40-10:00 (20min)

› Epitaxial Growth and Characterization of 2-Dimensional GaSe/InSe on Si(111) for High-Frequency and Optoelectronic Applications - Naveed Stegamat, IEMN/Epiphy 10:00-10:20 (20min)

10:20 - 10:50 (30min)

Pause café

10:50 - 12:50 (2h)

Epitaxie sous fortes intéractions

Chair: Yvon Cordier (CRHEA)

› Epitaxy of layered perovskite-based ferroelectrics: from enhanced polarization to magnetoelectric phase design - Elzbieta Gradauskaite, Laboratoire Albert Fert 10:50-11:20 (30min)

› Accommodation of highly mismatched III-V semiconductors by nansocale selective area growth - Ludovic Desplanque, Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 11:20-11:50 (30min)

› STRUCTURE ATOMIQUE DES PAROIS D'INVERSION DANS LES COUCHES DE SEMICONDUCTEURS III-V EPITAXIEES SUR SUBSTRAT SILICIUM (100) - Gilles Patriarche, Centre de Nanosciences et de Nanotechnologies 11:50-12:10 (20min)

› MBE Growth of GaSb on (Si)Ge-Si Platforms - Sébastien LACAZE, Institut d'Electronique et des Systèmes - UMR 5214 12:10-12:30 (20min)

› InGaN donor substrate for highly relaxed InGaN pseudo-substrate towards red emission - Hassan Damen, Université Grenoble Alpes 12:30-12:50 (20min)

12:50 - 14:00 (1h10)

Déjeuner

14:00 - 15:50 (1h50)

Epitaxie sous faibles intéractions (Van der Waals)

chair: Adrien Michon (CRHEA)

› Germanene growth on Ag(111) - Romain Bernard, Institut des Nanosciences de Paris 14:00-14:30 (30min)

› Quasi-Van der Waals Epitaxy of WSe2 on W(110) single crystal - Niels Chapuis, Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies 14:30-14:50 (20min)

› Giant Spintronic terahertz emission from epitaxially grown PtTe2 - Rahul Sharma, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-SPINTEC, F-38000 Grenoble, FRANCE 14:50-15:10 (20min)

› Macro and nanocharacterisation of epilayer NbSe2/GaP - Victor Vanduynslaeger, Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 15:10-15:30 (20min)

› Advancing 2D Materials: A Novel Two-Step Route to MoSe₂ Epitaxy Explained by Kinetic Monte Carlo Simulations - Kejian Wang, Institut des Nanosciences de Paris 15:30-15:50 (20min)

15:50 - 16:20 (30min)

Pause café

16:20 - 17:40 (1h20)

Propriétés ultimes et ingéniérie quantique

Chair: Matthieu Jamet (CEA)

› Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping - Francesca Chiodi, Centre de Nanosciences et de Nanotechnologies 16:20-16:50 (30min)

› Fractional quantum Hall state preserving electrostatic gates - Lukas Berg, Centre de Nanosciences et de Nanotechnologies 16:50-17:20 (30min)

› Tailoring novel group IV quantum materials - Mathieu Turmel, Silicon Nanoelectronics Photonics and Structures 17:20-17:40 (20min)

20:00 - 23:00 (3h)

Dîner