08:00
09:00
10:00
11:00
12:00
13:00
14:00
15:00
16:00
17:00
18:00
19:00
20:00
21:00
22:00
23:00
13:30 - 13:45 (15min)
Ouverture de la conférence
13:45 - 15:45 (2h)
Modélisation et prédiction
Chair: Michele Amato (LPS)
› Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapes
- Sreejith Pallikkara Chandrasekharan, Institut des Fonctions Optiques pour les Technologies de l'informatiON
13:45-14:15 (30min)
› Marangoni driven active flakes during 2D material growth on liquid metal surfaces
- Prabhu Mahesh Krishna, Modélisation et Exploration des Matériaux, Institut de Recherche Interdisciplinaire de Grenoble
14:15-14:45 (30min)
› KINETIC MONTE CARLO SIMULATION OF GaAs GROWTH ON (001) SILICON
- Milan SILVESTRE, Institut d'Electronique et des Systèmes, RIBER SA, F – 95870 Bezons, France
14:45-15:05 (20min)
› Nanowire growth regimes and chemical potential measurement
- Frank Glas, Centre de Nanosciences et de Nanotechnologies
15:05-15:25 (20min)
› The Unexpected Dewetting during Growth of Silicene Flakes with Dendritic Pyramids
- Jean-Noël Aqua, Institut des Nanosciences de Paris
15:25-15:45 (20min)
15:45 - 16:10 (25min)
Pause café
16:10 - 18:20 (2h10)
Enjeux industriels: du matériau au dispositif
Chair: Fabien Deprat (ST)
› Very low temperature Epitaxy in advanced CMOS devices
- Joel Kanyandekwe, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
16:10-16:40 (30min)
› Auto-dopage Arsenic lors d'épitaxies silicium par dépôt chimique en phase vapeur
- Evan OUDOT, STMicroelectronics Crolles
16:40-17:00 (20min)
› Doped polycrystalline Si:C for next generation bipolar emitter and imager technology
- Mattéo Devaux, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, STMicroelectronics
17:00-17:20 (20min)
› Croissance épitaxiale basse température de silicium à base de disilane, par RP-CVD
- Alice FERRANDON, ST Microelectronics, IM2NP
17:20-17:40 (20min)
› Room temperature GeSn nanowire array SWIR photodetectors on Si
- Théophile Willoquet, Quantum Photonics, Electronics and Engineering Laboratory (PHELIQS)
17:40-18:00 (20min)
› Germination du SiGe sur oxyde et nitrure de silicium par épitaxie RP-CVD à 550 °C
- Mounir SOUALHI, STMicroelectronics [Crolles]
18:00-18:20 (20min)
8:30 - 10:40 (2h10)
Epitaxie de nanostructures et de nouveaux systèmes
Chair: Fabrice Oehler (C2N)
› InGaN -based nanostructures for photoelectrochemical water splitting
- Blandine Alloing, Centre de recherche sur l'hétéroepitaxie et ses applications
08:30-09:00 (30min)
› Toward UV-C emission in core-shell structures based on (Al)GaN-µpillars arrays
- Houssein Mohaidly, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
09:00-09:20 (20min)
› Patterned growth of GaAs on Si using alternative lithography methods
- Charles RENARD, Centre de Nanosciences et de Nanotechnologies
09:20-09:40 (20min)
› Toward the realization of InGaN micro-substrates by HVPE for efficient red emitting micro-LEDs
- Arthur Sauvagnat, Institut Pascal
09:40-10:00 (20min)
› Arrays of Epitaxial GaN Nano-Crystallites Grown by VLS approach at Low-Temperature (500-650°C) on Various Substrates
- Alexandre Jaud, Laboratoire des Multimatériaux et Interfaces (LMI)
10:00-10:20 (20min)
› Experimental study and Kinetic Monte Carlo simulation of InGaN nanodots growth
- HYDRICE NZOMO, Institut Pascal
10:20-10:40 (20min)
10:40 - 11:10 (30min)
Pause café
11:10 - 12:50 (1h40)
Développements expérimentaux et caractérisations ex- et in-situ
Chair: Jean-Baptiste Rodriguez (IES)
› Cavity-enhanced optical flux monitoring for the growth of oxide materials.
- Roman Rousseau, École Centrale de Lyon
11:10-11:40 (30min)
› Probing inversion symmetry breaking and related electronic properties in ultrathin tellurides
- Fabien Cheynis, Centre Interdisciplinaire de Nanoscience de Marseille
11:40-12:10 (30min)
› Molecular beam epitaxy of BaTiO₃ assisted by broadband cavity-enhanced optical flux monitoring.
- Mohamed Oussama BOUNAB, Institut des nanotechnologies de Lyon - Site d'Ecully
12:10-12:30 (20min)
› Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura
- Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI)
12:30-12:50 (20min)
12:50 - 14:00 (1h10)
Déjeuner
14:00 - 15:50 (1h50)
Couplage épitaxie/propriétés
Chair: Noelle Gogneau (C2N)
› Magnetic and spin-transport properties of MgB2-based and NbN-based epitaxial multilayers.
- Thomas Hauet, Institut Jean Lamour
14:00-14:30 (30min)
› Strain relaxation in ferroelectric/dielectric superlattices and its impact on ferroelectric domains
- Nathalie Lemee, Laboratoire de Physique de la Matière Condensée - UR UPJV 2081
14:30-14:50 (20min)
› Epitaxial growth and process developments for SiC-based CMUTs in harsh environments
- Khaoula Azaiez, Centre de recherche sur l'hétéroepitaxie et ses applications
14:50-15:10 (20min)
› Investigation of InGaN buffer layer inclusion in InGaN/GaN Nanowire Superlattice: A way towards high efficiency red light emission
- Krishnendu Sarkar, Centre de Nanosciences et de Nanotechnologies
15:10-15:30 (20min)
› InGaN templates on porous layers for red LED epitaxy
- benjamin damilano, CRHEA
15:30-15:50 (20min)
15:50 - 16:20 (30min)
Pause Café
16:20 - 17:50 (1h30)
Session Poster
› Study of Ga2O3 thin films homoepitaxially grown on (010), (-201) and (001) substrates.
- Vincent Sallet, Groupe d'Etude de la Matière Condensée
16:20-17:50 (1h30)
› Al0.15Ga0.85N compliant microdisks: an innovative template unlocking AlGaN growth across the entire aluminium composition range
- Lea Lacomblez, Centre de recherche sur l'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Etude des propriétés de transport des parois d'antiphase dans les semiconducteurs III-V/Si par les techniques C-AFM et KPFM.
- Rozenn Bernard, Institut des Fonctions Optiques pour les Technologies de l'informatiON
16:20-17:50 (1h30)
› NH3-MBE growth of ScAlN/GaN HEMTs with cap layers
- Yvon Cordier, Centre de recherche sur l'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Croissance du SiGe et SiGeC par épitaxie RP-CVD entre 550 °C et 500 °C
- Mounir SOUALHI, STMicroelectronics [Crolles]
16:20-17:50 (1h30)
› FROM STRUCTURAL BOUNDARIES TO EMBEDDED CONDUCTION NETWORKS: ANTIPHASE BOUNDARIES AS VARIABLE-RANGE HOPPING PATHWAYS IN GAP/SI (001) HETEROSTRUCTURES
- Wijden Khelifi, Institut de Physique de Rennes
16:20-17:50 (1h30)
› GaN heteroepitaxy on Mesoporous Si compliant substrates
- NGUYEN Tan Hoang Vu, GREYC, Université Caen Normandie, ENSICAEN, CNRS, France, University Côte d'Azur, CNRS, CRHEA, Valbonne, France
16:20-17:50 (1h30)
› Multiscale simulations for epitaxial growth of semiconductor materials
- Vanessa Batibuka Teza, STMicroelectronics [Grenoble]
16:20-17:50 (1h30)
› Global and local mapping of strains by X-ray diffraction within InxGa1-xN templates on porous layers for µLEDs epitaxy
- Daniel Pépin FOWAN, CNRS
16:20-17:50 (1h30)
› Growth of WO3 thin films on W(110)
- Hozane Blanche NGONGANG ELOKO, Centre Interdisciplinaire de Nanoscience de Marseille
16:20-17:50 (1h30)
› Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura
- Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI)
16:20-17:50 (1h30)
› Gas-assisted MBE growth of MoS2 on cystalline substrates
- Minh-Tuan Dau, Centre de recherche sur l\'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Selective area growth of infrared GeSn semiconductors on Si
- Léa Combes, PHotonique, ELectronique et Ingénierie QuantiqueS
16:20-17:50 (1h30)
› III-V Epitaxy on 300mm Si Substrate by MOCVD for Micro and Optoelectronic Applications
- Clara Cornille, Laboratoire des technologies de la microélectronique
16:20-17:50 (1h30)
18:00 - 19:30 (1h30)
Réunion du comité scientifique
8:30 - 10:20 (1h50)
Epitaxie sous faibles intéractions (Van der Waals)
Chair: Xavier Wallart (IEMN)
› Growth of transition metal dichalcogenide materials on sapphire with metal organic chemical vapor deposition
- Pierre Morin, IMEC
08:30-09:00 (30min)
› Proximity effect between 2D ferroelectric and ferromagnetic materials
- Cyriack Jego, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, F-38000 Grenoble, FRANCE
09:00-09:20 (20min)
› Controlled formation of quasi-free-standing graphene on SiC via post-growth and cooling-phase hydrogenation
- AHMED-ABDOU-RABEH EL ALOUANI, Centre de recherche sur l'hétéroepitaxie et ses applications, Laboratoire Charles Coulomb
09:20-09:40 (20min)
› Miscibility gap and CVD growth of monolayer WSeTe
- Fabrice Oehler, C2N
09:40-10:00 (20min)
› Epitaxial Growth and Characterization of 2-Dimensional GaSe/InSe on Si(111) for High-Frequency and Optoelectronic Applications
- Naveed Stegamat, IEMN/Epiphy
10:00-10:20 (20min)
10:20 - 10:50 (30min)
Pause café
10:50 - 12:50 (2h)
Epitaxie sous fortes intéractions
Chair: Yvon Cordier (CRHEA)
› Epitaxy of layered perovskite-based ferroelectrics: from enhanced polarization to magnetoelectric phase design
- Elzbieta Gradauskaite, Laboratoire Albert Fert
10:50-11:20 (30min)
› Accommodation of highly mismatched III-V semiconductors by nansocale selective area growth
- Ludovic Desplanque, Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
11:20-11:50 (30min)
› STRUCTURE ATOMIQUE DES PAROIS D'INVERSION DANS LES COUCHES DE SEMICONDUCTEURS III-V EPITAXIEES SUR SUBSTRAT SILICIUM (100)
- Gilles Patriarche, Centre de Nanosciences et de Nanotechnologies
11:50-12:10 (20min)
› MBE Growth of GaSb on (Si)Ge-Si Platforms
- Sébastien LACAZE, Institut d'Electronique et des Systèmes - UMR 5214
12:10-12:30 (20min)
› InGaN donor substrate for highly relaxed InGaN pseudo-substrate towards red emission
- Hassan Damen, Université Grenoble Alpes
12:30-12:50 (20min)
12:50 - 14:00 (1h10)
Déjeuner
14:00 - 15:50 (1h50)
Epitaxie sous faibles intéractions (Van der Waals)
chair: Adrien Michon (CRHEA)
› Germanene growth on Ag(111)
- Romain Bernard, Institut des Nanosciences de Paris
14:00-14:30 (30min)
› Quasi-Van der Waals Epitaxy of WSe2 on W(110) single crystal
- Niels Chapuis, Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies
14:30-14:50 (20min)
› Giant Spintronic terahertz emission from epitaxially grown PtTe2
- Rahul Sharma, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-SPINTEC, F-38000 Grenoble, FRANCE
14:50-15:10 (20min)
› Macro and nanocharacterisation of epilayer NbSe2/GaP
- Victor Vanduynslaeger, Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
15:10-15:30 (20min)
› Advancing 2D Materials: A Novel Two-Step Route to MoSe₂ Epitaxy Explained by Kinetic Monte Carlo Simulations
- Kejian Wang, Institut des Nanosciences de Paris
15:30-15:50 (20min)
15:50 - 16:20 (30min)
Pause café
16:20 - 17:40 (1h20)
Propriétés ultimes et ingéniérie quantique
Chair: Matthieu Jamet (CEA)
› Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping
- Francesca Chiodi, Centre de Nanosciences et de Nanotechnologies
16:20-16:50 (30min)
› Fractional quantum Hall state preserving electrostatic gates
- Lukas Berg, Centre de Nanosciences et de Nanotechnologies
16:50-17:20 (30min)
› Tailoring novel group IV quantum materials
- Mathieu Turmel, Silicon Nanoelectronics Photonics and Structures
17:20-17:40 (20min)
20:00 - 23:00 (3h)
Dîner
8:30 - 10:20 (1h50)
Couplage épitaxie/propriétés
Chair: Benjamin Damilano (CRHEA)
› Al0.15Ga0.85N compliant microdisks: an innovative template unlocking the growth of relaxed crack free AlxGa1-xN micropallets for ultraviolet microdevices applications
- Pierre-Marie Coulon, Centre de recherche sur l'hétéroepitaxie et ses applications
08:30-09:00 (30min)
› Étude et développement de la Reprise Bout-à-Bout de GaInAsP et AlGaInAs sur InP via MOVPE
- Gustavo Afonso de Castro, Alcatel-Thales III-V Lab
09:00-09:20 (20min)
› Developement of WTe2/Sapphire on spin-orbitronics applications
- Jaurès FOTIE NGOUFO, Centre Interdisciplinaire de Nanoscience de Marseille
09:20-09:40 (20min)
› When the nanoscale properties govern the electromechanical conversion properties of III-Nitride NWs
- Noelle Gogneau, Centre de Nanosciences et de Nanotechnologies
09:40-10:00 (20min)
› Diamond as semiconductor: its n-type challenge
- Marie-Amandine Pinault-Thaury, Groupe dÉtude de la Matière Condensée
10:00-10:20 (20min)
10:20 - 10:50 (30min)
Pause café
10:50 - 12:20 (1h30)
Fonctionnalisation des matériaux
Chair: Guillaume Saint-Girons (INL)
› Transfer of epitaxial oxide films on non-adapted substrates
- Ulrike Lüders, Laboratoire de cristallographie et sciences des matériaux
10:50-11:20 (30min)
› Suspended double-clamped microbridges for resonant infrared bolometers based on epitaxial La2/3Sr1/3MnO3 thin films on buffered silicon
- Laurence MECHIN, Equipe Electronique - Laboratoire GREYC - UMR6072
11:20-11:40 (20min)
› Investigation of InGaN/GaN nanowire oxidation for functionalization and size-tuning of the quantum discs
- Nidel Dilan TCHOULAYEU POSSIE, Department of photonics, Department of Materials
11:40-12:00 (20min)
› Conversion of Epitaxial Graphene to 2D diamane on Silicon Carbide
- Loïc Rayneau, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
12:00-12:20 (20min)
