› InGaN -based nanostructures for photoelectrochemical water splitting - Blandine Alloing, Centre de recherche sur l'hétéroepitaxie et ses applications
08:30-09:00 (30min)
› Toward UV-C emission in core-shell structures based on (Al)GaN-µpillars arrays - Houssein Mohaidly, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
09:00-09:20 (20min)
› Patterned growth of GaAs on Si using alternative lithography methods - Charles RENARD, Centre de Nanosciences et de Nanotechnologies
09:20-09:40 (20min)
› Toward the realization of InGaN micro-substrates by HVPE for efficient red emitting micro-LEDs - Arthur Sauvagnat, Institut Pascal
09:40-10:00 (20min)
› Arrays of Epitaxial GaN Nano-Crystallites Grown by VLS approach at Low-Temperature (500-650°C) on Various Substrates - Alexandre Jaud, Laboratoire des Multimatériaux et Interfaces (LMI)
10:00-10:20 (20min)
› Experimental study and Kinetic Monte Carlo simulation of InGaN nanodots growth - HYDRICE NZOMO, Institut Pascal
10:20-10:40 (20min)
Instrumentations and ex- or in-situ characterizations
Chair: Jean-Baptiste Rodriguez (IES)
› Cavity-enhanced optical flux monitoring for the growth of oxide materials. - Roman Rousseau, École Centrale de Lyon
11:10-11:40 (30min)
› Probing inversion symmetry breaking and related electronic properties in ultrathin tellurides - Fabien Cheynis, Centre Interdisciplinaire de Nanoscience de Marseille
11:40-12:10 (30min)
› Molecular beam epitaxy of BaTiO₃ assisted by broadband cavity-enhanced optical flux monitoring. - Mohamed Oussama BOUNAB, Institut des nanotechnologies de Lyon - Site d'Ecully
12:10-12:30 (20min)
› Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura - Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI)
12:30-12:50 (20min)
› Magnetic and spin-transport properties of MgB2-based and NbN-based epitaxial multilayers. - Thomas Hauet, Institut Jean Lamour
14:00-14:30 (30min)
› Strain relaxation in ferroelectric/dielectric superlattices and its impact on ferroelectric domains - Nathalie Lemee, Laboratoire de Physique de la Matière Condensée - UR UPJV 2081
14:30-14:50 (20min)
› Epitaxial growth and process developments for SiC-based CMUTs in harsh environments - Khaoula Azaiez, Centre de recherche sur l'hétéroepitaxie et ses applications
14:50-15:10 (20min)
› Investigation of InGaN buffer layer inclusion in InGaN/GaN Nanowire Superlattice: A way towards high efficiency red light emission - Krishnendu Sarkar, Centre de Nanosciences et de Nanotechnologies
15:10-15:30 (20min)
› InGaN templates on porous layers for red LED epitaxy - benjamin damilano, CRHEA
15:30-15:50 (20min)
› Study of Ga2O3 thin films homoepitaxially grown on (010), (-201) and (001) substrates. - Vincent Sallet, Groupe d'Etude de la Matière Condensée
16:20-17:50 (1h30)
› Al0.15Ga0.85N compliant microdisks: an innovative template unlocking AlGaN growth across the entire aluminium composition range - Lea Lacomblez, Centre de recherche sur l'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Etude des propriétés de transport des parois d'antiphase dans les semiconducteurs III-V/Si par les techniques C-AFM et KPFM. - Rozenn Bernard, Institut des Fonctions Optiques pour les Technologies de l'informatiON
16:20-17:50 (1h30)
› NH3-MBE growth of ScAlN/GaN HEMTs with cap layers - Yvon Cordier, Centre de recherche sur l'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Croissance du SiGe et SiGeC par épitaxie RP-CVD entre 550 °C et 500 °C - Mounir SOUALHI, STMicroelectronics [Crolles]
16:20-17:50 (1h30)
› FROM STRUCTURAL BOUNDARIES TO EMBEDDED CONDUCTION NETWORKS: ANTIPHASE BOUNDARIES AS VARIABLE-RANGE HOPPING PATHWAYS IN GAP/SI (001) HETEROSTRUCTURES - Wijden Khelifi, Institut de Physique de Rennes
16:20-17:50 (1h30)
› GaN heteroepitaxy on Mesoporous Si compliant substrates - NGUYEN Tan Hoang Vu, GREYC, Université Caen Normandie, ENSICAEN, CNRS, France, University Côte d'Azur, CNRS, CRHEA, Valbonne, France
16:20-17:50 (1h30)
› Multiscale simulations for epitaxial growth of semiconductor materials - Vanessa Batibuka Teza, STMicroelectronics [Grenoble]
16:20-17:50 (1h30)
› Global and local mapping of strains by X-ray diffraction within InxGa1-xN templates on porous layers for µLEDs epitaxy - Daniel Pépin FOWAN, CNRS
16:20-17:50 (1h30)
› Growth of WO3 thin films on W(110) - Hozane Blanche NGONGANG ELOKO, Centre Interdisciplinaire de Nanoscience de Marseille
16:20-17:50 (1h30)
› Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura - Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI)
16:20-17:50 (1h30)
› Gas-assisted MBE growth of MoS2 on cystalline substrates - Minh-Tuan Dau, Centre de recherche sur l\'hétéroepitaxie et ses applications
16:20-17:50 (1h30)
› Selective area growth of infrared GeSn semiconductors on Si - Léa Combes, PHotonique, ELectronique et Ingénierie QuantiqueS
16:20-17:50 (1h30)
› III-V Epitaxy on 300mm Si Substrate by MOCVD for Micro and Optoelectronic Applications - Clara Cornille, Laboratoire des technologies de la microélectronique
16:20-17:50 (1h30)
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