Invited presentations

Axe Modélisation et prédiction:

• Sreejith Pallikkara Chandrasekharan (FOTON): Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapes
   
• Mahesh Krishna Prabhu (CEA Grenoble): Marangoni driven active flakes during 2D material growth on liquid metal surfaces

Axe Epitaxie sous fortes interactions:

• Elzbieta Gradauskaite (Laboratorie Albert Fert, CNRS/Thales): Epitaxy of layered perovskite-based ferroelectrics: from enhanced polarization to magnetoelectric phase design

Ludovic Desplanque (IEMN):  Accommodation of highly mismatched III-V semiconductors by nansocale selective area growth

Axe Epitaxie sous faible interaction (Van der Waals):

• Pierre Morin (IMEC): Growth of transition metal dichalcogenide materials on sapphire with metal organic chemical vapor deposition
   
• Romain Bernard (INSP): Germanene growth on Ag(111)

Axe Développemnts instrumentaux et caractérisations ex- et in-situ:

• Roman Rousseau (INL): Cavity-enhanced optical flux monitoring for the growth of oxide materials

• Fabien Cheynis (CINAM):  Probing inversion symmetry breaking and related electronic properties in ultrathin tellurides

Axe Epitaxie de nanostructures et de nouveaux systèmes:

• Blandine Alloing (CRHEA):  InGaN -based nanostructures for photoelectrochemical water splitting

Axe Couplage Epitaxie/Propriétés:

• Pierre-Marie Coulon (CRHEA): Al0.15Ga0.85N compliant microdisks: an innovative template unlocking the growth of relaxed crack free AlxGa1-xN micropallets for ultraviolet microdevices applications
   
• Thomas Hauet (Institut Jean Lamour, Université de Lorraine-CNRS): Magnetic and spin-transport properties of MgB2-based and NbN-based epitaxial multilayers

Axe Propriétés ultimes et ingéniérie quantique:

• Lukas Berg (C2N): Fractional quantum Hall state preserving electrostatic gates
   
• Francesca Chiodi (C2N): Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping

Axe Fonctionnalisation des matériaux:

• Ulrike Lüders (CRISMAT): Transfer of epitaxial oxide films on non-adapted substrates

Axe Enjeux industriels: du matériau au dispositif:

• Joel  Kanyandekwe (LETI):  Very low temperature Epitaxy in advanced CMOS devices