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lundi 3 novembre 2025
| Heures | événement | (+) |
| 13:30 - 13:45 | Ouverture de la conférence | |
| 13:45 - 15:45 | Modélisation et prédiction - Chair: Michele Amato (LPS) | (+) |
| 13:45 - 14:15 | › Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapes - Sreejith Pallikkara Chandrasekharan, Institut des Fonctions Optiques pour les Technologies de l'informatiON | |
| 14:15 - 14:45 | › Marangoni driven active flakes during 2D material growth on liquid metal surfaces - Prabhu Mahesh Krishna, Modélisation et Exploration des Matériaux, Institut de Recherche Interdisciplinaire de Grenoble | |
| 14:45 - 15:05 | › KINETIC MONTE CARLO SIMULATION OF GaAs GROWTH ON (001) SILICON - Milan SILVESTRE, Institut d'Electronique et des Systèmes, RIBER SA, F – 95870 Bezons, France | |
| 15:05 - 15:25 | › Nanowire growth regimes and chemical potential measurement - Frank Glas, Centre de Nanosciences et de Nanotechnologies | |
| 15:25 - 15:45 | › The Unexpected Dewetting during Growth of Silicene Flakes with Dendritic Pyramids - Jean-Noël Aqua, Institut des Nanosciences de Paris | |
| 15:45 - 16:10 | Pause café | |
| 16:10 - 18:20 | Enjeux industriels: du matériau au dispositif - Chair: Fabien Deprat (ST) | (+) |
| 16:10 - 16:40 | › Very low temperature Epitaxy in advanced CMOS devices - Joel Kanyandekwe, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information | |
| 16:40 - 17:00 | › Auto-dopage Arsenic lors d'épitaxies silicium par dépôt chimique en phase vapeur - Evan OUDOT, STMicroelectronics Crolles | |
| 17:00 - 17:20 | › Doped polycrystalline Si:C for next generation bipolar emitter and imager technology - Mattéo Devaux, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, STMicroelectronics | |
| 17:20 - 17:40 | › Croissance épitaxiale basse température de silicium à base de disilane, par RP-CVD - Alice FERRANDON, ST Microelectronics, IM2NP | |
| 17:40 - 18:00 | › Room temperature GeSn nanowire array SWIR photodetectors on Si - Théophile Willoquet, Quantum Photonics, Electronics and Engineering Laboratory (PHELIQS) | |
| 18:00 - 18:20 | › Germination du SiGe sur oxyde et nitrure de silicium par épitaxie RP-CVD à 550 °C - Mounir SOUALHI, STMicroelectronics [Crolles] |
mardi 4 novembre 2025
| Heures | événement | (+) |
| 08:30 - 10:40 | Epitaxie de nanostructures et de nouveaux systèmes - Chair: Fabrice Oehler (C2N) | (+) |
| 08:30 - 09:00 | › InGaN -based nanostructures for photoelectrochemical water splitting - Blandine Alloing, Centre de recherche sur l'hétéroepitaxie et ses applications | |
| 09:00 - 09:20 | › Toward UV-C emission in core-shell structures based on (Al)GaN-µpillars arrays - Houssein Mohaidly, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information | |
| 09:20 - 09:40 | › Patterned growth of GaAs on Si using alternative lithography methods - Charles RENARD, Centre de Nanosciences et de Nanotechnologies | |
| 09:40 - 10:00 | › Toward the realization of InGaN micro-substrates by HVPE for efficient red emitting micro-LEDs - Arthur Sauvagnat, Institut Pascal | |
| 10:00 - 10:20 | › Arrays of Epitaxial GaN Nano-Crystallites Grown by VLS approach at Low-Temperature (500-650°C) on Various Substrates - Alexandre Jaud, Laboratoire des Multimatériaux et Interfaces (LMI) | |
| 10:20 - 10:40 | › Experimental study and Kinetic Monte Carlo simulation of InGaN nanodots growth - HYDRICE NZOMO, Institut Pascal | |
| 10:40 - 11:10 | Pause café | |
| 11:10 - 12:50 | Développements expérimentaux et caractérisations ex- et in-situ - Chair: Jean-Baptiste Rodriguez (IES) | (+) |
| 11:10 - 11:40 | › Cavity-enhanced optical flux monitoring for the growth of oxide materials. - Roman Rousseau, École Centrale de Lyon | |
| 11:40 - 12:10 | › Probing inversion symmetry breaking and related electronic properties in ultrathin tellurides - Fabien Cheynis, Centre Interdisciplinaire de Nanoscience de Marseille | |
| 12:10 - 12:30 | › Molecular beam epitaxy of BaTiO₃ assisted by broadband cavity-enhanced optical flux monitoring. - Mohamed Oussama BOUNAB, Institut des nanotechnologies de Lyon - Site d'Ecully | |
| 12:30 - 12:50 | › Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura - Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI) | |
| 12:50 - 14:00 | Déjeuner | |
| 14:00 - 15:50 | Couplage épitaxie/propriétés - Chair: Noelle Gogneau (C2N) | (+) |
| 14:00 - 14:30 | › Magnetic and spin-transport properties of MgB2-based and NbN-based epitaxial multilayers. - Thomas Hauet, Institut Jean Lamour | |
| 14:30 - 14:50 | › Strain relaxation in ferroelectric/dielectric superlattices and its impact on ferroelectric domains - Nathalie Lemee, Laboratoire de Physique de la Matière Condensée - UR UPJV 2081 | |
| 14:50 - 15:10 | › Epitaxial growth and process developments for SiC-based CMUTs in harsh environments - Khaoula Azaiez, Centre de recherche sur l'hétéroepitaxie et ses applications | |
| 15:10 - 15:30 | › Investigation of InGaN buffer layer inclusion in InGaN/GaN Nanowire Superlattice: A way towards high efficiency red light emission - Krishnendu Sarkar, Centre de Nanosciences et de Nanotechnologies | |
| 15:30 - 15:50 | › InGaN templates on porous layers for red LED epitaxy - benjamin damilano, CRHEA | |
| 15:50 - 16:20 | Pause Café | |
| 16:20 - 17:50 | Session Poster | (+) |
| 16:20 - 17:50 | › Study of Ga2O3 thin films homoepitaxially grown on (010), (-201) and (001) substrates. - Vincent Sallet, Groupe d'Etude de la Matière Condensée | |
| 16:20 - 17:50 | › Al0.15Ga0.85N compliant microdisks: an innovative template unlocking AlGaN growth across the entire aluminium composition range - Lea Lacomblez, Centre de recherche sur l'hétéroepitaxie et ses applications | |
| 16:20 - 17:50 | › Etude des propriétés de transport des parois d'antiphase dans les semiconducteurs III-V/Si par les techniques C-AFM et KPFM. - Rozenn Bernard, Institut des Fonctions Optiques pour les Technologies de l'informatiON | |
| 16:20 - 17:50 | › NH3-MBE growth of ScAlN/GaN HEMTs with cap layers - Yvon Cordier, Centre de recherche sur l'hétéroepitaxie et ses applications | |
| 16:20 - 17:50 | › Croissance du SiGe et SiGeC par épitaxie RP-CVD entre 550 °C et 500 °C - Mounir SOUALHI, STMicroelectronics [Crolles] | |
| 16:20 - 17:50 | › FROM STRUCTURAL BOUNDARIES TO EMBEDDED CONDUCTION NETWORKS: ANTIPHASE BOUNDARIES AS VARIABLE-RANGE HOPPING PATHWAYS IN GAP/SI (001) HETEROSTRUCTURES - Wijden Khelifi, Institut de Physique de Rennes | |
| 16:20 - 17:50 | › GaN heteroepitaxy on Mesoporous Si compliant substrates - NGUYEN Tan Hoang Vu, GREYC, Université Caen Normandie, ENSICAEN, CNRS, France, University Côte d'Azur, CNRS, CRHEA, Valbonne, France | |
| 16:20 - 17:50 | › Multiscale simulations for epitaxial growth of semiconductor materials - Vanessa Batibuka Teza, STMicroelectronics [Grenoble] | |
| 16:20 - 17:50 | › Global and local mapping of strains by X-ray diffraction within InxGa1-xN templates on porous layers for µLEDs epitaxy - Daniel Pépin FOWAN, CNRS | |
| 16:20 - 17:50 | › Growth of WO3 thin films on W(110) - Hozane Blanche NGONGANG ELOKO, Centre Interdisciplinaire de Nanoscience de Marseille | |
| 16:20 - 17:50 | › Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura - Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI) | |
| 16:20 - 17:50 | › Gas-assisted MBE growth of MoS2 on cystalline substrates - Minh-Tuan Dau, Centre de recherche sur l\'hétéroepitaxie et ses applications | |
| 16:20 - 17:50 | › Selective area growth of infrared GeSn semiconductors on Si - Léa Combes, PHotonique, ELectronique et Ingénierie QuantiqueS | |
| 16:20 - 17:50 | › III-V Epitaxy on 300mm Si Substrate by MOCVD for Micro and Optoelectronic Applications - Clara Cornille, Laboratoire des technologies de la microélectronique | |
| 18:00 - 19:30 | Réunion du comité scientifique |
mercredi 5 novembre 2025
| Heures | événement | (+) |
| 08:30 - 10:20 | Epitaxie sous faibles intéractions (Van der Waals) - Chair: Xavier Wallart (IEMN) | (+) |
| 08:30 - 09:00 | › Growth of transition metal dichalcogenide materials on sapphire with metal organic chemical vapor deposition - Pierre Morin, IMEC | |
| 09:00 - 09:20 | › Proximity effect between 2D ferroelectric and ferromagnetic materials - Cyriack Jego, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, F-38000 Grenoble, FRANCE | |
| 09:20 - 09:40 | › Controlled formation of quasi-free-standing graphene on SiC via post-growth and cooling-phase hydrogenation - AHMED-ABDOU-RABEH EL ALOUANI, Centre de recherche sur l'hétéroepitaxie et ses applications, Laboratoire Charles Coulomb | |
| 09:40 - 10:00 | › Miscibility gap and CVD growth of monolayer WSeTe - Fabrice Oehler, C2N | |
| 10:00 - 10:20 | › Epitaxial Growth and Characterization of 2-Dimensional GaSe/InSe on Si(111) for High-Frequency and Optoelectronic Applications - Naveed Stegamat, IEMN/Epiphy | |
| 10:20 - 10:50 | Pause café | |
| 10:50 - 12:50 | Epitaxie sous fortes intéractions - Chair: Yvon Cordier (CRHEA) | (+) |
| 10:50 - 11:20 | › Epitaxy of layered perovskite-based ferroelectrics: from enhanced polarization to magnetoelectric phase design - Elzbieta Gradauskaite, Laboratoire Albert Fert | |
| 11:20 - 11:50 | › Accommodation of highly mismatched III-V semiconductors by nansocale selective area growth - Ludovic Desplanque, Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 | |
| 11:50 - 12:10 | › STRUCTURE ATOMIQUE DES PAROIS D'INVERSION DANS LES COUCHES DE SEMICONDUCTEURS III-V EPITAXIEES SUR SUBSTRAT SILICIUM (100) - Gilles Patriarche, Centre de Nanosciences et de Nanotechnologies | |
| 12:10 - 12:30 | › MBE Growth of GaSb on (Si)Ge-Si Platforms - Sébastien LACAZE, Institut d'Electronique et des Systèmes - UMR 5214 | |
| 12:30 - 12:50 | › InGaN donor substrate for highly relaxed InGaN pseudo-substrate towards red emission - Hassan Damen, Université Grenoble Alpes | |
| 12:50 - 14:00 | Déjeuner | |
| 14:00 - 15:50 | Epitaxie sous faibles intéractions (Van der Waals) - chair: Adrien Michon (CRHEA) | (+) |
| 14:00 - 14:30 | › Germanene growth on Ag(111) - Romain Bernard, Institut des Nanosciences de Paris | |
| 14:30 - 14:50 | › Quasi-Van der Waals Epitaxy of WSe2 on W(110) single crystal - Niels Chapuis, Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies | |
| 14:50 - 15:10 | › Giant Spintronic terahertz emission from epitaxially grown PtTe2 - Rahul Sharma, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-SPINTEC, F-38000 Grenoble, FRANCE | |
| 15:10 - 15:30 | › Macro and nanocharacterisation of epilayer NbSe2/GaP - Victor Vanduynslaeger, Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 | |
| 15:30 - 15:50 | › Advancing 2D Materials: A Novel Two-Step Route to MoSe₂ Epitaxy Explained by Kinetic Monte Carlo Simulations - Kejian Wang, Institut des Nanosciences de Paris | |
| 15:50 - 16:20 | Pause café | |
| 16:20 - 17:40 | Propriétés ultimes et ingéniérie quantique - Chair: Matthieu Jamet (CEA) | (+) |
| 16:20 - 16:50 | › Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping - Francesca Chiodi, Centre de Nanosciences et de Nanotechnologies | |
| 16:50 - 17:20 | › Fractional quantum Hall state preserving electrostatic gates - Lukas Berg, Centre de Nanosciences et de Nanotechnologies | |
| 17:20 - 17:40 | › Tailoring novel group IV quantum materials - Mathieu Turmel, Silicon Nanoelectronics Photonics and Structures | |
| 20:00 - 23:00 | Dîner |
jeudi 6 novembre 2025
| Heures | événement | (+) |
| 08:30 - 10:20 | Couplage épitaxie/propriétés - Chair: Benjamin Damilano (CRHEA) | (+) |
| 08:30 - 09:00 | › Al0.15Ga0.85N compliant microdisks: an innovative template unlocking the growth of relaxed crack free AlxGa1-xN micropallets for ultraviolet microdevices applications - Pierre-Marie Coulon, Centre de recherche sur l'hétéroepitaxie et ses applications | |
| 09:00 - 09:20 | › Étude et développement de la Reprise Bout-à-Bout de GaInAsP et AlGaInAs sur InP via MOVPE - Gustavo Afonso de Castro, Alcatel-Thales III-V Lab | |
| 09:20 - 09:40 | › Developement of WTe2/Sapphire on spin-orbitronics applications - Jaurès FOTIE NGOUFO, Centre Interdisciplinaire de Nanoscience de Marseille | |
| 09:40 - 10:00 | › When the nanoscale properties govern the electromechanical conversion properties of III-Nitride NWs - Noelle Gogneau, Centre de Nanosciences et de Nanotechnologies | |
| 10:00 - 10:20 | › Diamond as semiconductor: its n-type challenge - Marie-Amandine Pinault-Thaury, Groupe dÉtude de la Matière Condensée | |
| 10:20 - 10:50 | Pause café | |
| 10:50 - 12:20 | Fonctionnalisation des matériaux - Chair: Guillaume Saint-Girons (INL) | (+) |
| 10:50 - 11:20 | › Transfer of epitaxial oxide films on non-adapted substrates - Ulrike Lüders, Laboratoire de cristallographie et sciences des matériaux | |
| 11:20 - 11:40 | › Suspended double-clamped microbridges for resonant infrared bolometers based on epitaxial La2/3Sr1/3MnO3 thin films on buffered silicon - Laurence MECHIN, Equipe Electronique - Laboratoire GREYC - UMR6072 | |
| 11:40 - 12:00 | › Investigation of InGaN/GaN nanowire oxidation for functionalization and size-tuning of the quantum discs - Nidel Dilan TCHOULAYEU POSSIE, Department of photonics, Department of Materials | |
| 12:00 - 12:20 | › Conversion of Epitaxial Graphene to 2D diamane on Silicon Carbide - Loïc Rayneau, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence |
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