Planning
| Time |
Event |
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13:30 - 13:45
|
Conference opening |
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13:45 - 15:45
|
Model and theory - Chair: Michele Amato (LPS) |
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|
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13:45 - 14:15 |
› Theoretical insights into heteroepitaxial growth: Predicting equilibrium crystal shapes - Sreejith Pallikkara Chandrasekharan, Institut des Fonctions Optiques pour les Technologies de l'informatiON |
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|
14:15 - 14:45 |
› Marangoni driven active flakes during 2D material growth on liquid metal surfaces - Prabhu Mahesh Krishna, Modélisation et Exploration des Matériaux, Institut de Recherche Interdisciplinaire de Grenoble |
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14:45 - 15:05 |
› KINETIC MONTE CARLO SIMULATION OF GaAs GROWTH ON (001) SILICON - Milan SILVESTRE, Institut d'Electronique et des Systèmes, RIBER SA, F – 95870 Bezons, France |
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15:05 - 15:25 |
› Nanowire growth regimes and chemical potential measurement - Frank Glas, Centre de Nanosciences et de Nanotechnologies |
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15:25 - 15:45 |
› The Unexpected Dewetting during Growth of Silicene Flakes with Dendritic Pyramids - Jean-Noël Aqua, Institut des Nanosciences de Paris |
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15:45 - 16:10
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Coffee break |
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16:10 - 18:20
|
Industrial challenges: from material to device - Chair: Fabien Deprat (ST) |
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16:10 - 16:40 |
› Very low temperature Epitaxy in advanced CMOS devices - Joel Kanyandekwe, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information |
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16:40 - 17:00 |
› Auto-dopage Arsenic lors d'épitaxies silicium par dépôt chimique en phase vapeur - Evan OUDOT, STMicroelectronics Crolles |
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17:00 - 17:20 |
› Doped polycrystalline Si:C for next generation bipolar emitter and imager technology - Mattéo Devaux, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, STMicroelectronics |
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|
17:20 - 17:40 |
› Croissance épitaxiale basse température de silicium à base de disilane, par RP-CVD - Alice FERRANDON, ST Microelectronics, IM2NP |
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17:40 - 18:00 |
› Room temperature GeSn nanowire array SWIR photodetectors on Si - Théophile Willoquet, Quantum Photonics, Electronics and Engineering Laboratory (PHELIQS) |
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18:00 - 18:20 |
› Germination du SiGe sur oxyde et nitrure de silicium par épitaxie RP-CVD à 550 °C - Mounir SOUALHI, STMicroelectronics [Crolles] |
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Tuesday, November 4, 2025
| Time |
Event |
(+)
|
|
08:30 - 10:40
|
Epitaxy of nanostructures and new systems - Chair: Fabrice Oehler (C2N) |
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08:30 - 09:00 |
› InGaN -based nanostructures for photoelectrochemical water splitting - Blandine Alloing, Centre de recherche sur l'hétéroepitaxie et ses applications |
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09:00 - 09:20 |
› Toward UV-C emission in core-shell structures based on (Al)GaN-µpillars arrays - Houssein Mohaidly, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information |
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09:20 - 09:40 |
› Patterned growth of GaAs on Si using alternative lithography methods - Charles RENARD, Centre de Nanosciences et de Nanotechnologies |
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09:40 - 10:00 |
› Toward the realization of InGaN micro-substrates by HVPE for efficient red emitting micro-LEDs - Arthur Sauvagnat, Institut Pascal |
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10:00 - 10:20 |
› Arrays of Epitaxial GaN Nano-Crystallites Grown by VLS approach at Low-Temperature (500-650°C) on Various Substrates - Alexandre Jaud, Laboratoire des Multimatériaux et Interfaces (LMI) |
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|
10:20 - 10:40 |
› Experimental study and Kinetic Monte Carlo simulation of InGaN nanodots growth - HYDRICE NZOMO, Institut Pascal |
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10:40 - 11:10
|
Coffee break |
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11:10 - 12:50
|
Instrumentations and ex- or in-situ characterizations - Chair: Jean-Baptiste Rodriguez (IES) |
(+)
|
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11:10 - 11:40 |
› Cavity-enhanced optical flux monitoring for the growth of oxide materials. - Roman Rousseau, École Centrale de Lyon |
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11:40 - 12:10 |
› Probing inversion symmetry breaking and related electronic properties in ultrathin tellurides - Fabien Cheynis, Centre Interdisciplinaire de Nanoscience de Marseille |
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12:10 - 12:30 |
› Molecular beam epitaxy of BaTiO₃ assisted by broadband cavity-enhanced optical flux monitoring. - Mohamed Oussama BOUNAB, Institut des nanotechnologies de Lyon - Site d'Ecully |
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12:30 - 12:50 |
› Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura - Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI) |
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12:50 - 14:00
|
Lunch |
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|
14:00 - 15:50
|
Copling between epitaxy and properties - Chair: Noelle Gogneau (C2N) |
(+)
|
|
14:00 - 14:30 |
› Magnetic and spin-transport properties of MgB2-based and NbN-based epitaxial multilayers. - Thomas Hauet, Institut Jean Lamour |
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14:30 - 14:50 |
› Strain relaxation in ferroelectric/dielectric superlattices and its impact on ferroelectric domains - Nathalie Lemee, Laboratoire de Physique de la Matière Condensée - UR UPJV 2081 |
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14:50 - 15:10 |
› Epitaxial growth and process developments for SiC-based CMUTs in harsh environments - Khaoula Azaiez, Centre de recherche sur l'hétéroepitaxie et ses applications |
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15:10 - 15:30 |
› Investigation of InGaN buffer layer inclusion in InGaN/GaN Nanowire Superlattice: A way towards high efficiency red light emission - Krishnendu Sarkar, Centre de Nanosciences et de Nanotechnologies |
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15:30 - 15:50 |
› InGaN templates on porous layers for red LED epitaxy - benjamin damilano, CRHEA |
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15:50 - 16:20
|
Coffee Break |
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|
16:20 - 17:50
|
Poster session |
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|
|
16:20 - 17:50 |
› Study of Ga2O3 thin films homoepitaxially grown on (010), (-201) and (001) substrates. - Vincent Sallet, Groupe d'Etude de la Matière Condensée |
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16:20 - 17:50 |
› Al0.15Ga0.85N compliant microdisks: an innovative template unlocking AlGaN growth across the entire aluminium composition range - Lea Lacomblez, Centre de recherche sur l'hétéroepitaxie et ses applications |
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16:20 - 17:50 |
› Etude des propriétés de transport des parois d'antiphase dans les semiconducteurs III-V/Si par les techniques C-AFM et KPFM. - Rozenn Bernard, Institut des Fonctions Optiques pour les Technologies de l'informatiON |
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16:20 - 17:50 |
› NH3-MBE growth of ScAlN/GaN HEMTs with cap layers - Yvon Cordier, Centre de recherche sur l'hétéroepitaxie et ses applications |
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16:20 - 17:50 |
› Croissance du SiGe et SiGeC par épitaxie RP-CVD entre 550 °C et 500 °C - Mounir SOUALHI, STMicroelectronics [Crolles] |
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|
16:20 - 17:50 |
› FROM STRUCTURAL BOUNDARIES TO EMBEDDED CONDUCTION NETWORKS: ANTIPHASE BOUNDARIES AS VARIABLE-RANGE HOPPING PATHWAYS IN GAP/SI (001) HETEROSTRUCTURES - Wijden Khelifi, Institut de Physique de Rennes |
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|
16:20 - 17:50 |
› GaN heteroepitaxy on Mesoporous Si compliant substrates - NGUYEN Tan Hoang Vu, GREYC, Université Caen Normandie, ENSICAEN, CNRS, France, University Côte d'Azur, CNRS, CRHEA, Valbonne, France |
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16:20 - 17:50 |
› Multiscale simulations for epitaxial growth of semiconductor materials - Vanessa Batibuka Teza, STMicroelectronics [Grenoble] |
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16:20 - 17:50 |
› Global and local mapping of strains by X-ray diffraction within InxGa1-xN templates on porous layers for µLEDs epitaxy - Daniel Pépin FOWAN, CNRS |
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16:20 - 17:50 |
› Growth of WO3 thin films on W(110) - Hozane Blanche NGONGANG ELOKO, Centre Interdisciplinaire de Nanoscience de Marseille |
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|
16:20 - 17:50 |
› Think Modular, Think Local => An Innovative CVD / ALD / VLS Reactor fully Designed and Manufactured in Europe / France / Aura - Christian Brylinski, Laboratoire des Multimatériaux et Interfaces (LMI) |
|
|
16:20 - 17:50 |
› Gas-assisted MBE growth of MoS2 on cystalline substrates - Minh-Tuan Dau, Centre de recherche sur l\'hétéroepitaxie et ses applications |
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16:20 - 17:50 |
› Selective area growth of infrared GeSn semiconductors on Si - Léa Combes, PHotonique, ELectronique et Ingénierie QuantiqueS |
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|
16:20 - 17:50 |
› III-V Epitaxy on 300mm Si Substrate by MOCVD for Micro and Optoelectronic Applications - Clara Cornille, Laboratoire des technologies de la microélectronique |
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|
18:00 - 19:30
|
Scientific committee meeting |
|
Wednesday, November 5, 2025
| Time |
Event |
(+)
|
|
08:30 - 10:20
|
Epitaxy under weak interactions (Van der Waals) - Chair: Xavier Wallart (IEMN) |
(+)
|
|
08:30 - 09:00 |
› Growth of transition metal dichalcogenide materials on sapphire with metal organic chemical vapor deposition - Pierre Morin, IMEC |
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|
09:00 - 09:20 |
› Proximity effect between 2D ferroelectric and ferromagnetic materials - Cyriack Jego, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, F-38000 Grenoble, FRANCE |
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|
09:20 - 09:40 |
› Controlled formation of quasi-free-standing graphene on SiC via post-growth and cooling-phase hydrogenation - AHMED-ABDOU-RABEH EL ALOUANI, Centre de recherche sur l'hétéroepitaxie et ses applications, Laboratoire Charles Coulomb |
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|
09:40 - 10:00 |
› Miscibility gap and CVD growth of monolayer WSeTe - Fabrice Oehler, C2N |
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|
10:00 - 10:20 |
› Epitaxial Growth and Characterization of 2-Dimensional GaSe/InSe on Si(111) for High-Frequency and Optoelectronic Applications - Naveed Stegamat, IEMN/Epiphy |
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|
10:20 - 10:50
|
Coffee break |
|
|
10:50 - 12:50
|
Epitaxy under strong interactions - Chair: Yvon Cordier (CRHEA) |
(+)
|
|
10:50 - 11:20 |
› Epitaxy of layered perovskite-based ferroelectrics: from enhanced polarization to magnetoelectric phase design - Elzbieta Gradauskaite, Laboratoire Albert Fert |
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|
11:20 - 11:50 |
› Accommodation of highly mismatched III-V semiconductors by nansocale selective area growth - Ludovic Desplanque, Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 |
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|
11:50 - 12:10 |
› STRUCTURE ATOMIQUE DES PAROIS D'INVERSION DANS LES COUCHES DE SEMICONDUCTEURS III-V EPITAXIEES SUR SUBSTRAT SILICIUM (100) - Gilles Patriarche, Centre de Nanosciences et de Nanotechnologies |
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|
12:10 - 12:30 |
› MBE Growth of GaSb on (Si)Ge-Si Platforms - Sébastien LACAZE, Institut d'Electronique et des Systèmes - UMR 5214 |
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12:30 - 12:50 |
› InGaN donor substrate for highly relaxed InGaN pseudo-substrate towards red emission - Hassan Damen, Université Grenoble Alpes |
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12:50 - 14:00
|
Lunch |
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|
14:00 - 15:50
|
Epitaxy under weak interactions (Van der Waals) - chair: Adrien Michon (CRHEA) |
(+)
|
|
14:00 - 14:30 |
› Germanene growth on Ag(111) - Romain Bernard, Institut des Nanosciences de Paris |
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|
14:30 - 14:50 |
› Quasi-Van der Waals Epitaxy of WSe2 on W(110) single crystal - Niels Chapuis, Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies |
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|
14:50 - 15:10 |
› Giant Spintronic terahertz emission from epitaxially grown PtTe2 - Rahul Sharma, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-SPINTEC, F-38000 Grenoble, FRANCE |
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|
15:10 - 15:30 |
› Macro and nanocharacterisation of epilayer NbSe2/GaP - Victor Vanduynslaeger, Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 |
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|
15:30 - 15:50 |
› Advancing 2D Materials: A Novel Two-Step Route to MoSe₂ Epitaxy Explained by Kinetic Monte Carlo Simulations - Kejian Wang, Institut des Nanosciences de Paris |
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15:50 - 16:20
|
Coffee break |
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|
16:20 - 17:40
|
Ultimate properties and quantum engineering - Chair: Matthieu Jamet (CEA) |
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|
|
16:20 - 16:50 |
› Tuning superconductivity in ultra-doped Si and SiGe epilayers with Nanosecond Laser Doping - Francesca Chiodi, Centre de Nanosciences et de Nanotechnologies |
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|
16:50 - 17:20 |
› Fractional quantum Hall state preserving electrostatic gates - Lukas Berg, Centre de Nanosciences et de Nanotechnologies |
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|
17:20 - 17:40 |
› Tailoring novel group IV quantum materials - Mathieu Turmel, Silicon Nanoelectronics Photonics and Structures |
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|
20:00 - 23:00
|
Dinner |
|
Thursday, November 6, 2025
| Time |
Event |
(+)
|
|
08:30 - 10:20
|
Copling between epitaxy and properties - Chair: Benjamin Damilano (CRHEA) |
(+)
|
|
08:30 - 09:00 |
› Al0.15Ga0.85N compliant microdisks: an innovative template unlocking the growth of relaxed crack free AlxGa1-xN micropallets for ultraviolet microdevices applications - Pierre-Marie Coulon, Centre de recherche sur l'hétéroepitaxie et ses applications |
|
|
09:00 - 09:20 |
› Étude et développement de la Reprise Bout-à-Bout de GaInAsP et AlGaInAs sur InP via MOVPE - Gustavo Afonso de Castro, Alcatel-Thales III-V Lab |
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|
09:20 - 09:40 |
› Developement of WTe2/Sapphire on spin-orbitronics applications - Jaurès FOTIE NGOUFO, Centre Interdisciplinaire de Nanoscience de Marseille |
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|
09:40 - 10:00 |
› When the nanoscale properties govern the electromechanical conversion properties of III-Nitride NWs - Noelle Gogneau, Centre de Nanosciences et de Nanotechnologies |
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|
10:00 - 10:20 |
› Diamond as semiconductor: its n-type challenge - Marie-Amandine Pinault-Thaury, Groupe dÉtude de la Matière Condensée |
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|
10:20 - 10:50
|
Coffee break |
|
|
10:50 - 12:20
|
Functionnalisation of materials - Chair: Guillaume Saint-Girons (INL) |
(+)
|
|
10:50 - 11:20 |
› Transfer of epitaxial oxide films on non-adapted substrates - Ulrike Lüders, Laboratoire de cristallographie et sciences des matériaux |
|
|
11:20 - 11:40 |
› Suspended double-clamped microbridges for resonant infrared bolometers based on epitaxial La2/3Sr1/3MnO3 thin films on buffered silicon - Laurence MECHIN, Equipe Electronique - Laboratoire GREYC - UMR6072 |
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|
11:40 - 12:00 |
› Investigation of InGaN/GaN nanowire oxidation for functionalization and size-tuning of the quantum discs - Nidel Dilan TCHOULAYEU POSSIE, Department of photonics, Department of Materials |
|
|
12:00 - 12:20 |
› Conversion of Epitaxial Graphene to 2D diamane on Silicon Carbide - Loïc Rayneau, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence |
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